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hannecart etienne

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Sf6 Gas TEST, handling and purifying Equipment | Progusa

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detachment and decomposition rates of SF6, SF5, and F in

Measured cross sections for prompt collisional detachment and decomposition of SF− 6, SF− 5, and F− in SF6 reported in the preceding companion

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Movable Tool/Vacuum/Sound Reduction Cart: 3 Steps (with

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Vacuum Tubes | Antique Electronic Supply

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Thermal energy reactions of N+2 (=1) with SF6, H2, D2, H,

The very fast charge transfer of N+ 2 with SF6 and the H abstraction from H2 by N+ 2 are found not to be detectably diminished by vibrational

Simulation of anisotropic etching of silicon in SF6+O2 plasma

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On the interface modeling of Li-SF6 wick combustion

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Quantitative Analysis for SF6 and its Compositions in GIS

Materials Engineering and Automatic Control: Quantitative Analysis for SF6 and its Compositions in GIS Subscriptions For Editors eBooks Log In My Cart Adva

IEE Colloquium: An Update in SF6 and Vacuum

The following topics were dealt with: distribution level switchgear; SF6 switchgear; vacuum switchgear; switchgear design; standardisation; switchgear applica

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Avalanche current measurements at high SF6 pressure

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Multipurpose cart for operation room use

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Calculation of combined diffusion coefficients in SF6-Cu

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Inference of vibrational anharmonicity in hot SF6: An

In an investigation of gaseous SF6 at temperatures ranging from 298 to almost 1000 K, the observed thermal expansion of the mean bond length as a

Vacuum Contactors

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Impact of SF6 technology upon distribution and utility

Add to cart IET members benefit from discounts to all IET publications quenching media, whereas more recently vacuum or SF6 is being increasingly

Fabrication of SiC Nanopillars by Inductively Coupled SF6/O2

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The ablation of quartz wall by SF6 under radiofrequency

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SF6-Multi-Analyser - precise determination of the gas quality

The new generation of the SF6-Multi-Analyser allows to determine the three major quality parameters (SF6 concentration, humidity and quantity of decomposition

Synchrotron radiation‐excited etching of SiO2 with SF6 at

Photoexcitedetching of SiO2 surface with SF6 gas is studied using undulator radiation at 143 and 251 Å as an extreme ultraviolet light source. The SF6

Reactive ion‐etching‐induced damage in silicon using SF6

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New measurements of the thermochemistry of SF5 and SF6

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ESR Spectra of Fluorine‐Containing Radicals in SF6 Matrices

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